Secondary-ion mass spectrometry of photosensitive heterophase semiconductor

被引：7

作者：

Rokakh, AG ^{[1
]}

Zhukov, AG ^{[1
]}

Stetsura, SV ^{[1
]}

Serdobintsev, AA ^{[1
]}

机构：

[1] Saratov NG Chernyshevskii State Univ, Saratov 410012, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 226卷 / 04期

关键词：

SIMS; heterophase semiconductor; photosensitivity; surface charging;

D O I：

10.1016/j.nimb.2004.08.009

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The influence of positively charged ion bombardment and white light illumination on polycrystalline high-resistance photosensitive CdS-PbS semiconductor was investigated by secondary-ion mass spectrometry method. The illumination during ion sputtering was found to result in an ion yield decrease of some film components (Cd or PbO) and in increase of another one (Pb). The experimental data are explained by the model of a heterophase semiconductor resistant to degradation. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：595 / 600

页数：6

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