320 x 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice

Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice are demonstrated on GaSb substrate. The material is grown with 50% cut-off wavelength of 2.9 mu m and 5.1 mu m for the blue channel and red channel, separately at 77 K. 320 x 256 focal plane arrays fabricated in this wafer is characterized. The peak quantum efficiency without antireflective coating is 37% at 1.7 mu m under no bias voltage and 28% at 3.2 mu m under bias voltage of 130 mV. The peak specific detectivity are 1.51 x 1012 cm center dot Hz(1/2)/W at 2.5 mu m and 6.11x10(11) cm center dot Hz(1/2)/W at 3.2 mu m. At 77 K, the noise equivalent difference temperature presents average values of 107 mK and 487 mK for the blue channel and red channel separately. (C) 2017 Elsevier B.V. All rights reserved.