Atomic-Layer Deposited Passivation Schemes for c-Si Solar Cells

被引：0

作者：

van de Loo, Bas W. H. ^{[1
]}

Macco, Bart ^{[1
]}

Melskens, Jimmy ^{[1
]}

Verheijenl, Marcel A. ^{[1
]}

Kessels, W. M. M. ^{[1
,2
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, POB 513, NL-5600 MB Eindhoven, Netherlands

[2] Solliance Solar Res, High Tech Campus 5, NL-5656 AE Eindhoven, Netherlands

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

surface passivation; crystalline silicon; charge carrier lifetime; photovoltaic cells; contacts; SURFACE RECOMBINATION; CRYSTALLINE SILICON; TUNNELING CONTACTS; ALD; WAFERS; OXIDES;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5, SiO2/Al2O3, HfO2/Al2O3 and TiO2, which altogether can passivate a wider variety of doped and textured Si surfaces. Moreover, they are interesting candidates in the emerging field of passivating contacts, for instance as novel tunnel oxides. In this field, ALD can offer some distinct advantages, such as a precise control in film thickness, composition and even area-selective deposition.

引用

页码：3655 / 3660

页数：6

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