A distributed regional modeling approach for power bipolar devices in circuit simulation

被引:1
|
作者
Berraies, MO [1 ]
Leturcq, P [1 ]
机构
[1] CNRS, Lab Anal & Architecture Syst, F-31077 Toulouse 04, France
关键词
D O I
10.1109/BIPOL.1997.647418
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An alternative strategy to circuit oriented power device modeling is presented It consists on a regional view to modeling and a new partition of the model library. The latter is made up of a limited number of submodels associated with well-identified regions of semiconductor structures. By linking these building blocks, one obtain an homogeneous set of power semiconductor device models.
引用
收藏
页码:131 / 134
页数:4
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