N-vacancy defects in c-BN and w-BN

被引:1
|
作者
Mota, R [1 ]
Piquini, P
Torres, V
Fazzio, A
机构
[1] Univ Fed Santa Maria, Dept Fis, BR-97119900 Santa Maria, RS, Brazil
[2] Univ Aveiro, Dept Fis, P-3810 Aveiro, Portugal
[3] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
关键词
electronic structure; N-vacancy; BN;
D O I
10.4028/www.scientific.net/MSF.258-263.1275
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using the ab initio Hartree-Fock method in the molecular-cluster approach the neutral and doubly-positively charged N-vacancy in cubic boron nitride (c-V-[N], c-V-[N](+2)) and in neutral wurtzite boron nitride (w-V-[N]) are studied. For all cases, after a total energy minimization, a C-3v local symmetry configuration is found. A charge trapped in the nitrogen vacancy is obtained resembling a F-center-type defect, like in alkali-halides. The possible role played by this F-center-type defect in the interpretation of EPR signals is discussed.
引用
收藏
页码:1275 / 1279
页数:5
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