Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC

被引：4

作者：

Intarasiri, S. ^{[1
]}

Dangtip, S.

Hallen, A.

Jensen, J.

Yu, L. D.

Possnert, G.

Singkarat, S.

机构：

[1] Chiang Mai Univ, Inst Sci & Technol Res & Dev, Chiang Mai 50200, Thailand

[2] Chiang Mai Univ, Fac Sci, Dept Phys, FNRF, Chiang Mai 50200, Thailand

[3] Mahidol Univ, Fac Sci, Dept Phys, Bangkok 10400, Thailand

[4] Royal Inst Technol, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden

[5] Uppsala Univ, Div Ion Phys, Angstrom Lab, SE-75121 Uppsala, Sweden

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷 / 195-198期

关键词：

ion beam synthesis (IBS); silicon; silicon carbide (SiC); glancing incidence X-ray diffraction (GIXRD); activation energy;

D O I：

10.1016/j.nimb.2007.01.022

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this experiment, carbon ions at 40 keV were implanted into (10 0) high-purity p-type silicon wafers at 400 degrees C to a fluence of 6.5 x 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at 800-1000 degrees C. Glancing incidence X-ray diffraction (GIXRD) was used to characterize the crystalline quality and estimate the grain size of nano-crystalline 3C-SiC. Activation energy for the growth of 3C-SiC was evaluated following the annealing behaviour of the GIXRD-characteristic 3C-SiC (111) peaks. It was found that the 3C-SiC was directly formed during ion implantation at this substrate temperature and the activation energy of the process was about 0.05 eV. Such a low energy was explained in terms of ion beam induced precipitate formation. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：195 / 198

页数：4

共 50 条

[1] Overview of 3C-SiC Crystalline Growth
Ferro, Gabriel
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 49 - 54
[2] Crystallization of ion-beam-synthesized SiC layer by thermal annealing
W. Wu
D.H. Chen
W.Y. Cheung
J.B. Xu
S.P. Wong
R.W.M. Kwok
I.H. Wilson
Applied Physics A, 1998, 66 : S539 - S543
[3] Crystallization of ion-beam-synthesized SiC layer by thermal annealing
Wu, W
Chen, DH
Cheung, WW
Xu, JB
Wong, SP
Kwok, RWM
Wilson, IH
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1): : S539 - S543
[4] Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si
F. Torregrosa
M. Canino
F. Li
F. Tamarri
B. Roux
S. Morata
F. La Via
M. Zielinski
R. Nipoti
MRS Advances, 2022, 7 : 1347 - 1352
[5] Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si
Torregrosa, F.
Canino, M.
Li, F.
Tamarri, F.
Roux, B.
Morata, S.
La Via, F.
Zielinski, M.
Nipoti, R.
MRS ADVANCES, 2022, 7 (36) : 1347 - 1352
[6] GROWTH OF 3C-SIC ON SILICON BY MOLECULAR AND ION-BEAM EPITAXY
MIYAZAWA, T
YOSHIDA, S
MISAWA, S
GONDA, S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 730 - 731
[7] Activation energy of nanoscale 3C-SiC island growth on Si substrate
Sun, Y
Ayabe, T
Miyasato, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (10B): : L1166 - L1168
[8] MOLECULAR AND ION-BEAM EPITAXY OF 3C-SIC
MIYAZAWA, T
YOSHIDA, S
MISAWA, S
GONDA, S
OHDOMARI, I
APPLIED PHYSICS LETTERS, 1984, 45 (04) : 380 - 382
[9] Ion-beam 3C-SiC heteroepitaxy on Si
Tsubouchi, Nobuteru
Chayahara, Akiyoshi
Mokuno, Yoshiaki
Kinomura, Atsushi
Horino, Yuji
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (12): : 7353 - 7354
[10] Ion-beam 3C-SiC heteroepitaxy on Si
Tsubouchi, N
Chayahara, A
Mokuno, Y
Kinomura, A
Horino, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (12): : 7353 - 7354

← 1 2 3 4 5 →