Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

被引：0
|
作者：
Naito, Muneyuki [1 ]
Hirata, Aklhiko [1 ]
Ishimaru, Manabu [1 ]
Hirotsu, Yoshihiko [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷
关键词：
iron silicides; ion implantation; solid phase crystallization; EELS mapping;
D O I：
10.1016/j.nimb.2007.01.023
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(l 11) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 x 10(17) and 4.0 x 10(17) CM-2. A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, beta-FeSi2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous beta-FeSi2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：340 / 343
页数：4
相关论文
共 50 条
  • [1] The post-annealing environment effect on the photoluminescence recovery of ion-irradiated Si nanocrystals
    Sias, U. S.
    Behar, M.
    Boudinov, H.
    Moreira, E. C.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 6 - 10
  • [2] ROLE OF DAMAGE IN ANNEALING CHARACTERISTICS OF ION IMPLANTED SI
    CROWDER, BL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 671 - &
  • [3] DAMAGE NUCLEATION AND ANNEALING IN MEV ION-IMPLANTED SI
    HOLLAND, OW
    ELGHOR, MK
    WHITE, CW
    APPLIED PHYSICS LETTERS, 1988, 53 (14) : 1282 - 1284
  • [4] AL-SI CONTACTS FORMED BY ION IRRADIATION AND POST-ANNEALING
    HUNG, LS
    MAYER, JW
    ZHANG, M
    WOLF, ED
    APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1123 - 1125
  • [5] Post-annealing temperature dependence of blistering in high-fluence ion-implanted H in Si⟨1 0 0⟩
    Liang, J. H.
    Bai, C. Y.
    Chao, D. S.
    Lin, C. M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (08): : 1349 - 1355
  • [6] Effects of Si ion implantation and post-annealing on yellow luminescence from GaN
    Dai, L
    Zhang, JC
    Chen, Y
    Ran, GZ
    Qin, GG
    PHYSICA B-CONDENSED MATTER, 2002, 322 (1-2) : 51 - 56
  • [7] Structural evolution in Fe ion implanted Si upon thermal annealing
    Omae, Keisuke
    Bae, In-Tae
    Naito, Muneyuki
    Ishimaru, Manabu
    Hirotsu, Yoshihiko
    Valdez, James A.
    Sickafus, Kurt E.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 250 : 300 - 302
  • [8] The post-annealing effects of GaN epilayer grown on N+-ion-implanted sapphire substrate
    Jhin, J
    Kang, P
    Byun, D
    Koh, EK
    Lee, JS
    Lee, JH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S345 - S348
  • [9] Fe incorporation into hydroxyapatite channels by Fe loading and post-annealing
    Kato, Sumio
    Ikeda, Sho
    Saito, Kanji
    Ogasawara, Masataka
    JOURNAL OF SOLID STATE CHEMISTRY, 2018, 265 : 411 - 416
  • [10] INDUCED FERROMAGNETISM AND POST-ANNEALING EFFECT OF SnO2 FILM IMPLANTED WITH DILUTE FE IONS
    Nomura, K.
    Reuther, H.
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 28, 2010, 28 : 19 - 22
12345