Continuous-Wave Electrically-Pumped GaSb-based VCSELs at ∼ 2.6 μm Operating up to 50°C

被引：0
|
作者：
Arafin, Shamsul [1 ]
Bachmann, Alexander [1 ]
Kashani-Shirazi, Kaveh [1 ]
Amann, Markus-Christian [1 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 | 2009年
关键词：
TDLAS; electrically-pumped; VCSEL; GaSb;
D O I：
10.1109/LEOS.2009.5343420
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first electrically-pumped single-mode GaSb-based vertical-cavity surface-emitting lasers emitting at similar to 2.6 gm are presented. The devices operate in continuous-wave with low threshold currents (I(th) = 3.8 mA at RT) up to 50 degrees C.
引用
收藏
页码：837 / 838
页数：2
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