III-V Compound Semiconductor Nanowires

被引：0
|
作者：
Joyce, H. J. [1 ]
Paiman, S. [1 ]
Gao, Q. [1 ]
Tan, H. H. [1 ]
Kim, Y. [2 ]
Smith, L. M. [3 ]
Jackson, H. E.
Yarrison-Rice, J. M. [4 ]
Zhang, X. [5 ]
Zou, J. [5 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, GPO Box 4, Canberra, ACT 0200, Australia
[2] Dong A University, Dept Phys, Busan 604714, South Korea
[3] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA
[4] Miami Univ, Dept Phys, Oxford, OH 45056 USA
[5] Univ Queensland, Sch Engn, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia
来源：
2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE | 2009年
基金：
澳大利亚研究理事会;
关键词：
Nanowires; III-V compound semiconductors; MOCVD; GROWTH;
D O I：
10.1109/NMDC.2009.5167572
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.
引用
收藏
页码：59 / +
页数：2
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