Sputtering of silicon by atomic and cluster bismuth ions: An influence of projectile nuclearity and specific kinetic energy on the sputter yield

被引：6

作者：

Tolstogouzov, A. ^{[1
,2
,3
]}

Mazarov, P. ^{[4
]}

Ieshkin, A. E. ^{[5
]}

Belykh, S. F. ^{[6
]}

Korobeishchikov, N. G. ^{[7
]}

Pelenovich, V. O. ^{[8
]}

Fu, D. J. ^{[3
]}

机构：

[1] Utkin Ryazan State Radio Engn Univ, Ryazan 390005, Russia

[2] Univ Nova Lisboa, Ctr Phys & Technol Res, P-2829516 Caparica, Portugal

[3] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China

[4] Raith GmbH, D-44263 Dortmund, Germany

[5] Lomonosov Moscow State Univ, Phys Dept, Moscow 119991, Russia

[6] Natl Res Univ, Moscow Aviat Inst, Moscow 125993, Russia

[7] Novosibirsk State Univ, Dept Appl Phys, Novosibirsk 630090, Russia

[8] Wuhan Univ, Sch Power & Mech Engn, Wuhan 430072, Peoples R China

来源：

VACUUM | 2021年 / 188卷

关键词：

Sputter yield; Silicon; Bismuth; Volume loss method; Non-additive sputtering; Liquid metal alloy ion source (LMAIS); EMISSION; METALS;

D O I：

10.1016/j.vacuum.2021.110188

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An influence of the specific kinetic energy Esp and nuclearity n of Bin+ (n = 1?4) projectiles on the sputter yield of Si was studied by means of the volume loss method. It was found that the specific sputter yield Ysp exhibited nonadditive increase with an increasing of n and Esp values. As a non-additivity k-factor, the slope of the straight line approximating Ysp(n) dependences at the same specific energy was proposed to use. For Bin+ (n = 1?4) projectiles at Esp = 10 keV at? 1 the k-factor was equal to 0.41 ? 0.08. In addition, it was ascertained that the efficiency of energy transfer from projectiles to target atoms increased with an increase in the projectile nuclearity, e.g., it was 2.8 times greater for Bi3+ bombarding ions as compared with Bi+ ones.

引用

页数：4

共 16 条

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