VSS-Induced NiSi2 Nanocrystal Memory

NiSi2 nanocrystals were synthesized and used as the floating gate for nonvolatile memory application. Vapor-solid-solid mechanism was employed to grow the NiS(i)2 nanocrystals by introducing SiH4 onto the Ni catalysts-covered SiO2/Si substrate at 600 degrees C. The average size and density of the NiSi2 nanocrystals are 7 similar to 10nm and 3 x 10(11) cm(-2), respectively. Metal-oxide-semiconductor field-effect-transistor memory with NiSi2 nanocrystals was fabricated and characterized. Programming/erasing, retention and endurance measurements were carried out and good performances were demonstrated.