High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD

被引：20
|
作者：
Lantratov, V. M. [1 ]
Kalyuzhnyi, N. A. [1 ]
Mintairov, S. A. [1 ]
Timoshina, N. Kh. [1 ]
Shvarts, M. Z. [1 ]
Andreev, V. M. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2007年 / 41卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
84.60.Jt; 81.15.Gh;
D O I：
10.1134/S106378260706022X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Monolithic dual-junction GaInP/GaAs solar cells grown by the MOCVD method were studied. The conditions of the growth of ternary GaxIn1-x P and AlxIn1-x P alloys lattice-matched to GaAs are optimized. Technology for fabrication of a tunneling diode with a high peak current density of 207 A/cm(2) on the basis of heavily doped n(++)-GaAs:Si and p(++)-AlGaAs:C layers is developed. Cascade GaInP/GaAs solar cells obtained as a result of relevant studies featuring a good efficiency of the solar-energy conversion both for space and terrestrial applications. The maximum value of the GaInP/GaAs solar-cell efficiency was 30.03% (at AM1.5D, 40 suns).
引用
收藏
页码：727 / 731
页数：5
相关论文
共 50 条
  • [1] High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD
    V. M. Lantratov
    N. A. Kalyuzhnyĭ
    S. A. Mintairov
    N. Kh. Timoshina
    M. Z. Shvarts
    V. M. Andreev
    Semiconductors, 2007, 41 : 727 - 731
  • [2] High-efficiency GaInP/GaAs tandem solar cells
    Bertness, KA
    Friedman, DJ
    Kurtz, SR
    Kibbler, AE
    Kramer, C
    Olson, JM
    JOURNAL OF PROPULSION AND POWER, 1996, 12 (05) : 842 - 846
  • [3] HIGH-EFFICIENCY GAINP/GAAS TANDEM SOLAR-CELLS
    BERTNESS, KA
    FRIEDMAN, DJ
    KURTZ, SR
    KIBBLER, AE
    KRAMER, C
    OLSON, JM
    IEEE AEROSPACE AND ELECTRONIC SYSTEMS MAGAZINE, 1994, 9 (12) : 12 - 17
  • [4] Modeling of GaInP/GaAs Dual-Junction Solar Cells including Tunnel Junction
    Baudrit, Mathieu
    Algora, Carlos
    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 576 - 580
  • [5] Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell
    Liu Lei
    Chen NuoFu
    Bai YiMing
    Cui Ming
    Zhang Han
    Gao FuBao
    Yin ZhiGang
    Zhang XingWang
    SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2009, 52 (05): : 1176 - 1180
  • [6] Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell
    Lei Liu
    NuoFu Chen
    YiMing Bai
    Ming Cui
    Han Zhang
    FuBao Gao
    ZhiGang Yin
    XingWang Zhang
    Science in China Series E: Technological Sciences, 2009, 52 : 1176 - 1180
  • [7] Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell
    LIU Lei1
    2 National Laboratory of Microgravity
    Science in China(Series E:Technological Sciences), 2009, 52 (05) : 1176 - 1180
  • [8] Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns
    Baudrit, Mathieu
    Algora, Carlos
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (02): : 474 - 478
  • [9] High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique
    Tukiainen, Antti
    Aho, Arto
    Gori, Gabriele
    Polojarvi, Ville
    Casale, Mariacristina
    Greco, Erminio
    Isoaho, Riku
    Aho, Timo
    Raappana, Marianna
    Campesato, Roberta
    Guina, Mircea
    PROGRESS IN PHOTOVOLTAICS, 2016, 24 (07): : 914 - 919
  • [10] GaInP/AlInP tunnel junction for GaInP/GaAs tandem solar cells
    Tampere Univ of Technology, Tampere, Finland
    Electron Lett, 4 (406-407):
12345