Large unsaturated transverse and negative longitudinal magnetoresistance in the compensated semimetal MoGe2

被引:6
|
作者
Huang, Yi-Fei [1 ,2 ,3 ]
Zhu, Wen-Liang [1 ,2 ,3 ]
Wang, Yi-Yan [1 ,2 ]
Dong, Qing-Xin [1 ,2 ,3 ]
Zhang, Li-Bo [1 ,2 ,3 ]
Li, Chen-Sheng [1 ,2 ,3 ]
OuYang, Hao [1 ,2 ,3 ]
Ren, Zhi-An [1 ,2 ,3 ,4 ]
Chen, Gen-Fu [1 ,2 ,3 ,4 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
[4] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
TOPOLOGICAL INSULATORS; WEAK-LOCALIZATION; TRANSITION; HALL;
D O I
10.1103/PhysRevB.103.134116
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the experimental results of magnetotransport on the single crystal MoGe2, which was theoretically predicated to be a topological insulator. The resistivity of MoGe2 exhibits a metallic behavior at zero field, while with magnetic fields applied along the z axis and perpendicular to current, MoGe2 presents an upturn resistivity behavior and unsaturated quadratic large magnetoresistance (MR). The analysis of Hall effect shows that MoGe2 is a compensated semimetal with high mobilities at low temperatures, which is the origin of resistivity upturn and unsaturated large MR. As magnetic fields parallel to current, MoGe2 shows a weak antilocalization effect at low fields and a pronounced negative MR at higher fields, which is analogous to the picture of the Adler-Bell-Jackiw axial anomaly. Our results indicate that MoGe2 is a topological semimetal rather than a topological insulator, and will encourage further theoretical and experimental investigations on this compound.
引用
收藏
页数:7
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