Influence of emission quantum wells on the efficiency of up-conversion infrared photodetectors

被引:0
|
作者
Kang Jian-Bin [1 ]
Wang Lei [1 ]
Hao Zhi-Biao [1 ]
Wang Chao [1 ]
Xie Li-Li [1 ]
Luo Yi [1 ]
Wang Lai [1 ]
Wang Jian [1 ]
Xiong Bing [1 ]
Sun Chang-Zheng [1 ]
Han Yon-Jun [1 ]
Li Hong-Tao [1 ]
Wang Lu [2 ]
Wang Wen-Xin [2 ]
Chen Hong [2 ]
机构
[1] Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
up-conversion; quantum well; emission efficiency; carrier distribution;
D O I
10.11972/j.issn.1001-9014.2016.03.006
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Up-conversion infrared (IR) photodetectors show great potential in large-array and low dark. current IR detection due to the advantages of pixelless imaging and being free from thermal mismatch between photodetectors and read-out integrated circuits. The emission efficiency of near-IR photons is one of the important issues that influence the up-conversion efficiency. In this paper, cascade IR up converters with different numbers of emission quantum wells were designed and fabricated. Based on the IR response measurement and simulation of carrier distribution, the influence of the number of quantum wells on the emission efficiency of near-IR photons was investigated. The experiment results indicate that the near-IR emission efficiency can be improved by adopting single emission quantum well, which consequently improves the up-conversion efficiency.
引用
收藏
页码:281 / 286
页数:6
相关论文
共 11 条
  • [1] Optimized GaAs/AlGaAs light-emitting diodes and high efficiency wafer-fused optical up-conversion devices
    Ban, D
    Luo, H
    Liu, HC
    Wasilewski, ZR
    SpringThorpe, AJ
    Glew, R
    Buchanan, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) : 5243 - 5248
  • [2] Long range resonant tunneling in quantum cascade structures
    Buffaz, A.
    Carras, M.
    Doyennette, L.
    Trinite, V.
    Marcadet, X.
    Berger, V.
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (16)
  • [3] Pixel-less infrared imaging based on the integration of an n-type quantum-well infrared photodetector with a light-emitting diode
    Dupont, E
    Liu, HC
    Buchanan, M
    Wasilewski, ZR
    St-Germain, D
    Chevrette, P
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (04) : 563 - 565
  • [4] Optically detected carrier transport in III/V semiconductor QW structures:: experiments, model calculations and applications in fast 1.55 μm laser devices
    Hillmer, H
    Marcinkevicius, S
    [J]. APPLIED PHYSICS B-LASERS AND OPTICS, 1998, 66 (01): : 1 - 17
  • [5] KANG Jian-Bin, 2015, ACTA PHYS SINICA, V64
  • [6] How good is the polarization selection rule for intersubband transitions?
    Liu, HC
    Buchanan, M
    Wasilewski, ZR
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (14) : 1682 - 1684
  • [7] INTEGRATED QUANTUM-WELL INTERSUB-BAND PHOTODETECTOR AND LIGHT-EMITTING DIODE
    LIU, HC
    LI, J
    WASILEWSKI, ZR
    BUCHANAN, M
    [J]. ELECTRONICS LETTERS, 1995, 31 (10) : 832 - 833
  • [8] Ll YJ, 2008, J INFRARED MILLIM W, V27, P409
  • [9] LUO Yi, 2011, China Patent, Patent No. 2011104389994
  • [10] HgCdTe infrared detector material: history, status and outlook
    Rogalski, A
    [J]. REPORTS ON PROGRESS IN PHYSICS, 2005, 68 (10) : 2267 - 2336