Field-effect modulation of resistance in VO2 thin film at lower temperature

In this paper we describe a prototype of a field effect transistor (FET) based on the Mott metal-insulator transition (MIT) in vanadium dioxide. It has been shown that increasing the modulation of the channel resistance, the gain of the field effect, and an increase of the amplification factor can be achieved by lowering the temperature of the channel. An increase of the transistor amplification factor by more than twice is shown while reducing the temperature from RT down to -21 degrees C. It is also shown that the modulation of the channel resistance is not associated with the occurrence of dynamic current through the gate insulator and the VO2-channel. Possible solutions to increase the efficiency of the VO2-based FET are analyzed L and described. (C) 2014 The Japan Society of Applied Physics