Two High Power and Broadband Power Amplifiers using Transformer-based Resonating Peak Control Technique for E-Band Communication and Automotive Radars in 55-nm CMOS

被引：1

作者：

Zhang, Runxi ^{[1
]}

Xue, Yuting ^{[1
]}

Jiang, Chunshen ^{[1
]}

Shi, Chunqi ^{[1
]}

Chen, Guangsheng ^{[2
]}

机构：

[1] East China Normal Univ, Inst Microelect Circuits & Syst, Shanghai 200241, Peoples R China

[2] Shanghai Eastsoft Microelect Co Ltd, Shanghai 200235, Peoples R China

来源：

2020 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2020 ONLINE) | 2020年

关键词：

Millimeter-wave; Power Amplifier; High Power; Broadband; Resonating Peak Control; Transformer;

D O I：

10.1109/ICMMT49418.2020.9386474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents two E-band millimeter-wave (mm-wave) transformer-based power amplifiers (PAs) implemented in 55-nm CMOS process, including a 1-way differential PA (PA1) and a 2-way differential PA (PA2). A transformer-based resonating peak control technique is proposed to realize broadband characteristic. The 1-way differential PA1 achieves a 3 dB bandwidth (BW-3dB) of 16 GHz, a P-sat of 17 dBm and a peak PAE of 18.4%. The 2-way PA2 achieves a BW-3dB of 14 GHz, a P-sat of 20 dBm and a PAE(MAX) of 14.3%.

引用

页数：3

共 9 条

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