BiCMOS Through-Silicon Via (TSV) Signal Transition at 240/300 GHz for MM-Wave & Sub-THz Packaging and Heterogeneous Integration

被引：0

作者：

Wietstruck, Matthias ^{[1
]}

Marschmeyer, Steffen ^{[1
]}

Wipf, Christian ^{[1
]}

Stocchi, Matteo ^{[1
]}

Kaynak, Mehmet ^{[1
]}

机构：

[1] IHP Leibniz Inst Innovat Mikroelekt, Frankfurt, Germany

来源：

2020 50TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2020年

关键词：

Through-silicon vias; BiCMOS integrated circuits; Integrated circuit packaging; Heterogeneous integration; SIGE BICMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the development of a BiCMOS embedded TSV technology for mm-wave/sub-THz applications is demonstrated. Annular-type TSVs enable low loss TSV transitions up to 300 GHz. Back-to-back TSV transitions are fabricated and characterized from 220 to 325 GHz providing a low insertion loss of 0.83 and 0.94 dB at 240 and 300 GHz. Results show that BiCMOS embedded TSVs are very good candidates to provide RF transitions for mm-wave/sub-THz packaging and 2.5/3D heterogeneous integration solutions.

引用

页码：244 / 247

页数：4

共 3 条

[1] BiCMOS Through-Silicon Via (TSV) Signal Transition at 240/300GHz for MM-Wave & Sub-THz Packaging and Heterogeneous Integration
Wietstruck, Matthias
Marschmeyer, Steffen
Wipf, Christian
Stocchi, Matteo
Kaynak, Mehmet
2020 50TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2020,
[2] BiCMOS Through-Silicon Via (TSV) Signal Transition at 240/300GHz for MM-Wave & Sub-THz Packaging and Heterogeneous Integration
Wietstruck, Matthias
Marschmeyer, Steffen
Wipf, Christian
Stocchi, Matteo
Kaynak, Mehmet
2020 50TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2020,
[3] Ultrawideband Signal Transition Using Quasi-Coaxial Through-Silicon-Via (TSV) for mm-Wave IC Packaging
Yook, Jong-Min
Kim, Young-Gon
Kim, Wansik
Kim, Sosu
Kim, Jun Chul
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2020, 30 (02) : 167 - 169

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