Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material

被引：2

作者：

Lin, Cong ^{[1
]}

Hu, Jing ^{[1
]}

Wei, Tao ^{[1
,2
]}

Li, Wanfei ^{[1
]}

Ling, Yun ^{[1
]}

Liu, Qianqian ^{[1
]}

Cheng, Miao ^{[1
]}

Song, Sannian ^{[2
]}

Song, Zhitang ^{[2
]}

Cheng, Yan ^{[3
]}

Zheng, Yonghui ^{[3
]}

Liu, Bo ^{[1
,2
]}

机构：

[1] Suzhou Univ Sci & Technol, Suzhou Key Lab Nanophoton & Nanoelect Mat & Its D, Sch Mat Sci & Engn, Suzhou 215009, Jiangsu, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[3] East China Normal Univ, Shanghai 200241, Peoples R China

来源：

MATERIALS LETTERS | 2022年 / 315卷

关键词：

Phase transition; Thin films; Thermal properties; Electrical properties; CRYSTALLIZATION; GE2SB2TE5;

D O I：

10.1016/j.matlet.2022.131977

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein, Cr was selected as the dopant to improve the performance of Sb2Te in phase change random access memory (PCRAM). The thermal properties, crystal structure and chemical bonding state of the as-prepared Cr0.39Sb2Te (CST) were investigated. The CST containing 11.5At% Cr-dopant exhibited excellent performances including high crystallization temperature (218.6 degrees C), good data retention (10 years @136.5 +/- 1.0 degrees C) and high stability with low-density change rate (2.8%). The switching speed up to 10 ns and the endurance nearly 1 x 10(5) cycles were obtained for the CST based PCRAM cells. All these findings indicated that the CST material is a potential candidate for universal memory devices.

引用

页数：4

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