Edge excitons in a 2D topological insulator in a magnetic field

被引：3
|
作者：
Entin, M. V. [1 ,2 ]
Magarill, L. I. [1 ,2 ]
Mahmoodian, M. M. [1 ,2 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
来源：
JETP LETTERS | 2016年 / 103卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
JETP Letter; Edge State; HgTe; Topological Insulator; Exciton State;
D O I：
10.1134/S0021364016050039
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Exciton edge states and the microwave edge exciton absorption of a 2D topological insulator subject to the in-plane magnetic field are studied. The magnetic field forms a narrow gap in electron edge states that allows the existence of edge exciton. The exciton binding energy is found to be much smaller than the energy of a 1D Coulomb state. Phototransitions exist on the exciton states with even numbers, while odd exciton states are dark.
引用
收藏
页码：328 / 333
页数：6
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