Evaluation of junction parameters with control of carrier concentration in Bi2Sr2CaCu2O8+δ stacked junctions

The control of the critical current density (J(C)) and the junction resistance (R-N) along the c axis of intrinsic Josephson junctions (IJJs) on a high-T-C superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of J(C), R-N, and the carrier concentration in Bi2Sr2CaCu2O8+delta whiskers by changing the carrier concentration with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the J(C) increased, and the R-N decreased systematically when the carrier concentration increased. The values of J(C) and R-N could be controlled by a change in the carrier concentration. (C) 2004 Elsevier B.V. All rights reserved.