Gate-oxide thickness effects on hot-carrier-induced degradation in n-MOSFETs

被引：0
|
作者：
Gu, Y [1 ]
Yuan, JS [1 ]
机构：
[1] UNIV CENT FLORIDA,DEPT ELECT & COMP ENGN,ORLANDO,FL 32816
来源：
SOUTHCON/96 - CONFERENCE RECORD | 1996年
关键词：
D O I：
10.1109/SOUTHC.1996.535099
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：390 / 395
页数：2
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