Design of a high sensitivity structure for MEMS fingerprint sensor

被引：1
|
作者：
Damghanian, Mitra [1 ]
Majlis, Burhanuddin Yeop [1 ]
机构：
[1] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect, Bangi 43600, Selangor, Malaysia
来源：
2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/SMELEC.2006.381043
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel capacitive pressure sensor structure for fingerprint sensor/imager application is described which has higher sensitivity and linearity compared to all reported prototypes. The protrusion also has got a new shape to achieve the maximum sensitivity. Simulations have been done by FEM analysis and the results show the great improvements in output parameters. The technique can be applied to other capacitive structures as well.
引用
收藏
页码：177 / +
页数：2
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