A compact mmic-compatible RF MEMS switch

被引：1

作者：

Dyck, CW ^{[1
]}

Plut, TA ^{[1
]}

Nordquist, CD ^{[1
]}

Kraus, G ^{[1
]}

Schmidt, GD ^{[1
]}

Gass, K ^{[1
]}

Finnegan, PS ^{[1
]}

Reines, I ^{[1
]}

Sullivan, C ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

MEMS COMPONENTS AND APPLICATIONS FOR INDUSTRY, AUTOMOBILES, AEROSPACE, AND COMMUNICATION II | 2003年 / 4981卷

关键词：

D O I：

10.1117/12.498237

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

We have fabricated and tested a surface micromachined, metal-metal contacting radio frequency microelectromechanical systems (RF MEMS) switch. The switch was fabricated out of electroplated metals on semi-insulating GaAs at process temperatures below 300degreesC. It was anchored by folded springs to one end of a coplanar waveguide (CPW) gap, forming a cantilever. This configuration allowed us to simplify the fabrication process by eliminating mechanical dielectric films that are normally necessary to isolate the switch contact from the actuation metal. The measured insertion loss and isolation at S band were 0.21 dB, and 28 dB isolation, respectively. An average switching speed of 83 mus at 55 volts was measured. This switch demonstrated >10(5) cold switching cycles without sticking, however rapid increase of the contact resistance was observed. A new switch was designed to increase isolation and reduce insertion loss by decreasing the coupling capacitance and increasing the contact force.

引用

页码：222 / 229

页数：8

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