Annealing assisted enhancement in photo response of PV deposited CdS thin films

被引:9
|
作者
Moger, Sahana Nagappa [1 ]
Kumar, Pawan [1 ]
Rao, Gowrish K. [1 ]
Mahesha, M. G. [1 ]
机构
[1] Manipal Acad Higher Educ, Manipal Inst Technol, Dept Phys, Manipal 576104, Karnataka, India
来源
关键词
CdS photodetector; Refractive index; Spectral response; Time response; Photoconductivity; ELECTRICAL-TRANSPORT PROPERTIES; REFRACTIVE-INDEX; ELECTRONIC-PROPERTIES; ENERGY-GAP; SEMICONDUCTORS; PHOTODETECTOR; IRRADIATION; PARAMETERS;
D O I
10.1016/j.optlastec.2022.107868
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
CdS films were deposited on glass substrates by thermal evaporation method at room temperature. The effect of air annealing on structural, optical, and electrical properties of the films were characterized by XRD, UV-Visible spectroscopy, Hall effect and I-V measurements. The structural parameters crystallite size and residual stress showed an inverse relation between them. After annealing, the absorption edge was red shifted. Different models that use band gap of the films as input parameter were adopted to calculated refractive indices of the films. Annealing has resulted in the enhancement of carrier mobility. Finally, the spectral and time response of the pristine and annealed CdS films have been studied in detail and response time was found to be in the microsecond range. Annealing has reduced the response time considerably and made the films suitable for photodetector in the visible range.
引用
收藏
页数:7
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