Electron states and magnetophotoluminescence of elongated InAs/GaAs quantum dots

被引:0
|
作者
Krapek, V. [1 ]
Kuldova, K. [2 ]
Oswald, J. [2 ]
Hospodkova, A. [2 ]
Hulicius, E. [2 ]
Humlicek, J. [1 ]
机构
[1] Masaryk Univ, Fac Sci, Kotlarska 2, CS-61137 Brno, Czech Republic
[2] Acad Sci Czech Republic, Inst Phys, Prague 16253, Czech Republic
来源
关键词
quantum dots; magnetophotoluminescence; elongation;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have calculated the electronic structure of a single InAs/GaAs quantum dot in a perpendicular magnetic field. Considerable sensitivity of the shift of energy levels in magnetic field to a lateral elongation of the dots is demonstrated and a possibility to retrieve the elongation from magnetophotoluminescence spectra is discussed. Sensitivity analysis shows that spectra with at least two well resolved bands are needed for a reliable determination of the elongation.
引用
收藏
页码:901 / +
页数:2
相关论文
共 50 条
  • [1] Elongation of InAs/GaAs quantum dots from magnetophotoluminescence measurements
    Krapek, V.
    Kuldova, K.
    Oswald, J.
    Hospodkova, A.
    Hulicius, E.
    Humlicek, J.
    APPLIED PHYSICS LETTERS, 2006, 89 (15)
  • [2] Photoluminescence and magnetophotoluminescence of circular and elliptical InAs/GaAs quantum dots
    Kuldová, K.
    Krápek, V.
    Hospodková, A.
    Zrzavecká, O. Bonaventurová
    Oswald, J.
    Hulicius, E.
    Humlicek, J.
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 983 - 986
  • [3] Characterization of electron trap states due to InAs quantum dots in GaAs
    Walther, C
    Bollmann, J
    Kissel, H
    Kirmse, H
    Neumann, W
    Masselink, WT
    APPLIED PHYSICS LETTERS, 2000, 76 (20) : 2916 - 2918
  • [4] Excited states of InAs/GaAs quantum dots
    Heitz, R
    Guffarth, F
    Mukhametzhanov, I
    Stier, O
    Madhukar, A
    Bimberg, D
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 224 (02): : 367 - 371
  • [5] Electron microscopy of GaAs Structures with InAs and as quantum dots
    V. N. Nevedomskii
    N. A. Bert
    V. V. Chaldyshev
    V. V. Preobrazhenskii
    M. A. Putyato
    B. R. Semyagin
    Semiconductors, 2011, 45 : 1580 - 1582
  • [6] Electron Microscopy of GaAs Structures with InAs and As Quantum Dots
    Nevedomskii, V. N.
    Bert, N. A.
    Chaldyshev, V. V.
    Preobrazhenskii, V. V.
    Putyato, M. A.
    Semyagin, B. R.
    SEMICONDUCTORS, 2011, 45 (12) : 1580 - 1582
  • [7] Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots
    Godefroo, S
    Maes, J
    Hayne, M
    Moshchalkov, VV
    Henini, M
    Pulizzi, F
    Patanè, A
    Eaves, L
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) : 2535 - 2539
  • [8] Lande g factors in elongated InAs/GaAs self-assembled quantum dots
    Sheng, Weidong
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (05): : 1473 - 1475
  • [9] Acousto-electron Effects in the InAs/GaAs Heterostructure with InAs Quantum Dots
    Peleshchak, Roman
    Kuzyk, Oleh
    Dan'kiv, Olesya
    PROCEEDINGS OF THE 2019 IEEE 9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATIONS & PROPERTIES (NAP-2019), PTS 1-2, 2019,
  • [10] Multiparticle states and Coulomb blockade in InAs/GaAs quantum dots
    Lab. de Phys. de la Matiere Cond., ENS, 24, rue Lhomond, 75005 Paris, France
    Phys E, 1-4 (678-681):