Pressure and temperature dependence of the band-gap in CdTe

被引:11
|
作者
Gilliland, S
González, J
Güder, HS
Segura, A
Mora, I
Muñoz, V
机构
[1] Univ Valencia, Inst Ciencia Mat, Dept Fis Aplicada, E-46100 Burjassot, Valencia, Spain
[2] Univ Los Andes, Fac Ciencias, Ctr Estudios Semicond, Merida 5251, Venezuela
[3] Mustafa Kemal Univ, Fac Arts & Sci, Dept Phys, TR-31040 Antakya, Hatay, Turkey
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2003年 / 235卷 / 02期
关键词
D O I
10.1002/pssb.200301599
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this paper we report on isothermal compression measurements (up to 5 GPa and 500 K) of the optical absorption edge of 1 mum epitaxial layers of CdTe growth by metalorganic chemical vapor deposition (MOCVD) on GaS substrates. The isothermal blue shift under pressure of the direct energy gap (Gamma(15)(v) --> Gamma(1)(c)) in the zinc-blende phase is about 7.1 x 10(-2) eV GPa(-1) and is found to be independent of temperature within the experimental errors. The isobaric red shift in the stability range of the zinc-blende phase is about -3.76 x 10(-4) eV K-1. Regarding the phase transitions, no discontinuity in the energy gap has been found in the narrow pressure range where the cinnabar phase can be present. The transition pressure to the NaCl-type structure in CdTe is found to decrease with increasing temperature (294-500 K) following the law P-t = 4.1 GPa - 6.6 x 10(-3) (T - 273) (K).
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页码:441 / 445
页数:5
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