Study of trenching formation during SF6/O2 reactive ion etching of 4H-SiC

被引：0

作者：

Simescu, F. ^{[1
]}

Coiffard, D. ^{[1
]}

Lazar, M. ^{[1
]}

Brosselard, P. ^{[1
]}

Planson, D. ^{[1
]}

机构：

[1] INSA Lyon, Lab AMPERE, CNRS, UMR 5005, F-69621 Villeurbanne, France

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2010年 / 12卷 / 03期

关键词：

Reactive ion etching; Silicon carbide; Trenching;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An accurate and reproducible SF6/O-2 reactive ion etching process in 4H-SIC has been defined, to realise deep and vertical trenches with a high selectivity Ti/Ni mask, and tilted sidewalls with a controlled angle by etching using a SiO2 mask. The trenching issues have been eliminated by increasing the plasma power. Smooth etched surfaces are obtained with a slightly tapered transition at the bottom of the sidewalls associated with a slight narrowing of the lower-end of the walls. Controlling the trench angle, very flat profiles are obtained for low pressure and plasma flow rates, and more vertical sidewalls by increasing these parameters.

引用

页码：766 / 769

页数：4