p-Benzoquinone on Si(111)-7x7: [6+2]-like Cycloaddition

被引:5
|
作者
Ning, Yue Sheng [1 ,2 ]
Shao, Yan Xia [1 ]
Xu, Guo Qin [1 ]
机构
[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[2] Dow Chem China Co Ltd, Shanghai 201203, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 23期
关键词
SHAKE-UP SATELLITES; SEMICONDUCTOR SURFACE; THERMAL-DECOMPOSITION; ELECTRON-DIFFRACTION; ORGANIC-MOLECULES; CHEMISTRY; ADSORPTION; SILICON; ETHYLENE; BENZENE;
D O I
10.1021/jp9115707
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Covalent binding of p-benzoquinone (O=C6H4=O) and the formation of an aromatic ring (-OC6H4-O-) on Si(111)-7 x 7 have been investigated by using high-resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. For chemisorbed p-benzoquinone, the absence of v(C=O) at 1659 cm(-1), the retention of sp(2-)u(C-H) at 3050 cm(-1), the appearance of u(Si-O) at 824 cm(-1), and aromatic v(C=C)/delta(ip) (C-H) at 1600/1505 cm(-1) demonstrate that the molecule reacts with the surface in a [6+2]-like cycloaddition mode, which is further confirmed by XPS and density functional theory (DFT) vibrational calculations. DFT calculations indicate that the [6+2]-like cycloadduct (-O-C6H4-O-) bridging two nearest adatoms in neighboring half-unit cells is the most stable. This binding scheme may prove useful for chemical and electronic modification of the semiconductor surfaces.
引用
收藏
页码:10455 / 10462
页数:8
相关论文
共 50 条
  • [1] Dissociation and [2+2]-like cycloaddition of unsaturated chain amines on Si(111)-7x7
    Huang, Jing Yan
    Tang, Hai Hua
    Shao, Yan Xia
    Liu, Qi Ping
    Alshahateet, Solhe F.
    Sun, Yue Ming
    Xu, Guo Qin
    JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (18): : 6732 - 6739
  • [2] PHOTOEMISSION FROM K/SI(111)7X7 AND CS/SI(111)7X7
    DITZINGER, UA
    LUNAU, C
    SCHIEWECK, B
    TOSCH, S
    NEDDERMEYER, H
    HANBUCKEN, M
    SURFACE SCIENCE, 1989, 211 (1-3) : 707 - 715
  • [3] INTERACTION OF SI2H6 WITH A SI(111)-7X7 SURFACE
    IMBIHL, R
    DEMUTH, JE
    GATES, SM
    SCOTT, BA
    PHYSICAL REVIEW B, 1989, 39 (08): : 5222 - 5233
  • [4] STRUCTURE OF SI(111)-7X7
    MCRAE, EG
    SURFACE SCIENCE, 1983, 124 (01) : 106 - 128
  • [5] Graphene on Si(111)7x7
    Ochedowski, O.
    Begall, G.
    Scheuschner, N.
    El Kharrazi, M.
    Maultzsch, J.
    Schleberger, M.
    NANOTECHNOLOGY, 2012, 23 (40)
  • [6] STRUCTURE OF SI(111)-7X7 .2.
    MCRAE, EG
    SURFACE SCIENCE, 1984, 147 (2-3) : 663 - 684
  • [7] SITE SELECTIVITY IN THE REACTION OF SI(111)-(7X7) WITH SI2H6
    AVOURIS, P
    BOZSO, F
    JOURNAL OF PHYSICAL CHEMISTRY, 1990, 94 (06): : 2243 - 2245
  • [8] EMPTY STATE ANISOTROPIES IN ULTRATHIN NI/SI(111)7X7 AND CU/SI(111)7X7 INTERFACES
    SACCHI, M
    SANCROTTI, M
    SAKHO, O
    ROSSI, G
    SURFACE SCIENCE, 1991, 251 : 301 - 304
  • [9] H2O ADSORPTION-KINETICS ON SI(111)7X7 AND SI(111)7X7 MODIFIED BY LASER ANNEALING
    WISE, ML
    OKADA, LA
    SNEH, O
    GEORGE, SM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (04): : 1853 - 1860
  • [10] REVISITING THE 7X7 RECONSTRUCTION OF SI(111)
    BINNIG, G
    ROHRER, H
    SALVAN, F
    GERBER, C
    BARO, A
    SURFACE SCIENCE, 1985, 157 (2-3) : L373 - L378