Failure analysis using the infrared optical-beam-induced Resistance-CHange (IR-OBIRCH) method

被引：0
|
作者：
Nikawa, K [1 ]
Morimoto, K [1 ]
Inoue, S [1 ]
机构：
[1] NEC Corp Ltd, Analyt Technol Dev Div, Tokyo, Japan
来源：
NEC RESEARCH & DEVELOPMENT | 2000年 / 41卷 / 04期
关键词：
IR-OBIRCH (Optical-Beam-Induced Resistance-CHange); laser beam heating; failure analysis; automated test equipment; DRAMs; logic LSIs; I-DDQ failure; functional failure;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We used the infrared optical-beam-induced resistance-change (IR-OBIRCH) method to detect and analyze failures in DRAMs and logic LSIs which failed during mass production, development, and use. When analyzing the logic LSIs, we sometimes applied test vectors by using automatic test equipment (ATE) docked to the IR-OBIRCH system so that failure states could be reproduced during IR-OBIRCH imaging. The results showed that the IR-OBIRCH method is effective for analyzing not only static failures but also functional failures.
引用
收藏
页码：359 / 363
页数：5
相关论文
共 21 条
  • [1] Failure analysis using the infrared optical-beam-induced resistance-CHange (IR-OBIRCH) method
    Nikawa, Kiyoshi
    Morimoto, Kazuyuki
    Inoue, Shoji
    NEC Research and Development, 2000, 41 (04): : 359 - 363
  • [2] Killer defect detection using the IR-OBIRCH (infrared optical-beam-induced resistance-change) method
    Nikawa, Kiyoshi
    Inoue, Shoji
    Morimoto, Kazuyuki
    IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings, 1999, : 103 - 106
  • [3] Failure analysis case studies using the IR-OBIRCH (Infrared Optical Beam Induced Resistance CHange) method
    Nikawa, Kiyoshi
    Inoue, Shoji
    Morimoto, Kazuyuki
    Sone, Shinya
    Proceedings of the Asian Test Symposium, 1999, : 394 - 399
  • [4] Thickness Measurement of Si Substrate with Infrared Laser of Optical Beam Induced Resistor Change (OBIRCH) in Failure Analysis
    Tian, Li
    Wu, Miao
    Fan, Diwei
    Wu, Chunlei
    Wen, Gaojie
    Wang, Dong
    PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013), 2013, : 32 - 34
  • [5] Optical beam induced resistance change (OBIRCH): Overview and recent results
    Nikawa, K
    2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2003, : 742 - 743
  • [6] Infrared Optical Beam Induced Resistance Change (IROBIRCH) technology for IC failure localization and analysis
    Weaver, K
    Acedo, H
    Gao, G
    2002 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP - FINAL REPORT, 2002, : 172 - 175
  • [7] A new failure observation in 0.10-μm-wide Cu lines using optical beam induced resistance changes (OBIRCH)
    Tagami, M
    Fukase, T
    Matsumoto, A
    Iguchi, M
    Hayashi, Y
    Matsubara, Y
    PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, : 95 - 97
  • [8] Interior Degradation Analysis of Distributed Feedback Laser Using Optical-Beam-Induced Current
    Takeshita, T.
    Oda, K.
    Mawatari, H.
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 14 (04) : 1074 - 1079
  • [9] 45nm node categorized via chain resistance and image by optical beam induced resistance changes (OBIRCH) method
    Matsubara, Yoshihisa
    Watanabe, Tadayoshi
    2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL, 2006, : 643 - +
  • [10] Analysis of wear-out degradation of a DFB laser using an optical-beam-induced current monitor
    Takeshita, Tatsuya
    Yamamoto, Mitsuo
    Iga, Ryuzo
    Sugo, Mitsuru
    Kondo, Yasuhiro
    Kato, Kazutoshi
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (08) : 1852 - 1859
123