An Implementation of External Capacitor-less Low-DropOut Voltage Regulator in 45nm Technology with Output Voltage Ranging from 0.4V-1.2V

被引:3
|
作者
Ahmed, Farid Uddin [1 ]
Sandhie, Zarin Tasnim [1 ]
Chowdhury, Masud H. [1 ]
机构
[1] Univ Missouri Kansas City, Sch Comp & Engn, Kansas City, MO 64110 USA
基金
美国国家科学基金会;
关键词
Voltage Regulator; Low-Dropout; Operational Amplifier; On-chip Voltage Regulator; Source-Follower; QUIESCENT CURRENT; LDO REGULATOR; DESIGN;
D O I
10.1109/ICCD50377.2020.00082
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Low-DropOut (LDO) regulators are one of the most essential and critical analog blocks in power management of System-on-Chip (SoC) design. In this work, we present an external capacitor-less LDO voltage regulator design implemented in 45nm technology. The proposed design eliminates the resistive feedback network with a transistor which allows more control over output voltage and improve the transient response and PSRR. The design consists of Error Amplifier (EA), one common-source (CS) stage, one buffer stage and 2 pass transistors which offers a wide range of output voltage ranging from 0.4V-1.2V with an input voltage of 1.8V. The design also ensures low power operation with 7.824uA quiescent current. Furthermore, the design incurs minimum area of 0.0149mm(2) and voltage overhead of 25mV(max) along with a stable output voltage with less than 1mV ripple. The schematic and layout designs are implemented and simulated in Cadence Virtuoso using 45nm bulk CMOS process.
引用
收藏
页码:453 / 456
页数:4
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