Fabrication and characterization of gated carbon nanotube emitters in a trench structure

被引：0
|
作者：
Liao, YF [1 ]
She, JC [1 ]
He, H [1 ]
Deng, SZ [1 ]
Chen, J [1 ]
Xu, NS [1 ]
机构：
[1] Sun Yat Sen Zhongshan Univ, State Key Lab Optoelect Mat & Technol, Guangzhou, Peoples R China
来源：
TECHNICAL DIGEST OF THE 17TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE | 2004年
关键词：
D O I：
10.1109/IVNC.2004.1354901
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：66 / 67
页数：2
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