Enhanced hydrogen bonding strength observed in hydrogenated SiC and SiO2/SiC structures

被引：11
|
作者：
Soares, G. V.
Baumvol, I. J. R.
Radtke, C.
Stedile, F. C.
机构：
[1] Univ Fed Rio Grande do Sul, PGMICRO, BR-90501970 Porto Alegre, RS, Brazil
[2] Univ Fed Rio Grande do Sul, IF, BR-91509900 Porto Alegre, RS, Brazil
[3] UCS, CCET, BR-95070560 Caxias Do Sul, RS, Brazil
[4] Univ Fed Rio Grande do Sul, Inst Quim, BR-91509900 Porto Alegre, RS, Brazil
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 08期
关键词：
D O I：
10.1063/1.2645341
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 films on SiC were investigated using isotopic substitution and nuclear reaction analyses. Hydrogen (deuterium) is found near the SiO2 film surface or close to the SiO2/SiC interface depending on the oxidation/D-2-annealing sequence, being much more strongly bound to SiC-based structures than to their Si counterparts. C compounds near the interface seem to play a significant role on the physicochemical and consequently on the electrical characteristics of the D passivated SiO2/SiC interface. (c) 2007 American Institute of Physics.
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