Impurity-induced defect states in Pb1-xGexTe alloys doped with gallium

被引：0
|
作者：
Skipetrov, EP [1 ]
Zvereva, EA [1 ]
Belousov, VV [1 ]
Skipetrova, LA [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia
来源：
INFRARED APPLICATIONS OF SEMICONDUCTORS III | 2000年 / 607卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Galvanomagnetic properties of n-Pb1-xGexTe<Ga>(0.04 less than or equal to x less than or equal to 0.08) single crystals have been investigated in the shielded from external background illumination chamber and under controlled illumination from infrared heat source. Low temperature activation range of the impurity conductivity on the dark curves of rho(1/T) was revealed and attributed to the appearance of gallium-induced deep level E-Ga in the gap of the alloys. It was shown that the alloys possess high infrared photosensitivity at temperatures below T-c=50 divided by 60 K, and effect of the persistent photoconductivity at helium temperatures was revealed.
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页码：333 / 337
页数：5
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