Time-resolved Faraday rotation measurements of spin relaxation in InGaAs/GaAs quantum dots: Role of excess energy

被引:16
|
作者
Robb, J. L.
Chen, Y.
Timmons, A.
Hall, K. C.
Shchekin, O. B.
Deppe, D. G.
机构
[1] Dalhousie Univ, Dept Phys, Halifax, NS B3H 1Z9, Canada
[2] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
基金
加拿大自然科学与工程研究理事会; 加拿大创新基金会;
关键词
D O I
10.1063/1.2721380
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report measurements of room temperature spin dynamics in InGaAs quantum dots using time-resolved differential transmission and Faraday rotation techniques. They observe an enhancement of the electron spin lifetime by an order of magnitude for direct optical pumping of the quantum dot ground state compared to optical pumping of the GaAs barriers. These findings indicate that the optical excitation conditions can have a critical influence on the spin kinetics, a result which may account for the wide variation of spin lifetimes reported to date. The enhancement in spin lifetime observed here is attributed to the reduction of phonon-mediated spin-flip scattering. (c) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 50 条
  • [1] Ultrafast time-resolved photoluminescence measurements on InGaAs/GaAs quantum dots
    Dao, LV
    Gal, M
    Babinski, A
    Jagadish, C
    COMMAD 2000 PROCEEDINGS, 2000, : 443 - 446
  • [2] TIME-RESOLVED OPTICAL CHARACTERIZATION OF INGAAS/GAAS QUANTUM DOTS
    WANG, G
    FAFARD, S
    LEONARD, D
    BOWERS, JE
    MERZ, JL
    PETROFF, PM
    APPLIED PHYSICS LETTERS, 1994, 64 (21) : 2815 - 2817
  • [3] Time-resolved studies of large InGaAs/GaAs quantum dots
    Krestnikov, IL
    Born, H
    Luttgert, T
    Heitz, R
    Tsatsul'nikov, AF
    Volovik, BV
    Maximov, MV
    Musikhin, YG
    Kovsh, AR
    Maleev, NA
    Zhukov, AE
    Ustinov, VM
    Ledentsov, NN
    Hoffmann, A
    Alferov, ZI
    Bimberg, D
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1241 - 1242
  • [4] Spin relaxation mechanism of strain-induced GaAs quantum dots studied by time-resolved Kerr rotation
    Kanno, A
    Masumoto, Y
    PHYSICAL REVIEW B, 2006, 73 (07):
  • [5] Effect of carrier recombination on time-resolved Faraday rotation spectroscopy in GaAs quantum wells
    Teng Li-Hua
    Wang Xia
    ACTA PHYSICA SINICA, 2011, 60 (05)
  • [6] TIME-RESOLVED RAMAN MEASUREMENTS OF INTERSUBBAND RELAXATION IN GAAS QUANTUM WELLS
    TATHAM, MC
    RYAN, JF
    FOXON, CT
    PHYSICAL REVIEW LETTERS, 1989, 63 (15) : 1637 - 1640
  • [7] Time-resolved nonlinear Faraday rotation in semimagnetic quantum wells
    Pankoke, R
    Leisching, P
    Buss, C
    Frey, R
    Cibert, J
    Flytzanis, C
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 204 (01): : 49 - 51
  • [8] Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements
    Ruan, X. Z.
    Sun, B. Q.
    Ji, Yang
    Yang, W.
    Zhao, J. H.
    Xu, Z. Y.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (07)
  • [9] Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
    Melnichenko, I. A.
    Nadtochiy, A. M.
    Ivanov, K. A.
    Makhov, I. S.
    Maximov, M. V.
    Mintairov, S. A.
    Kalyuzhnyy, N. A.
    Kryzhanovskaya, N. V.
    Zhukov, A. E.
    ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2023, 16 (01): : 22 - 27
  • [10] TIME-RESOLVED MEASUREMENTS OF THE ENERGY RELAXATION IN THE 2DEG OF ALGAAS/GAAS
    LUTZ, J
    KUCHAR, F
    ISMAIL, K
    NICKEL, H
    SCHLAPP, W
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (03) : 399 - 402