A 40nm 100Kb 118.44TOPS/W Ternary-weight Compute-in-Memory RRAM Macro with Voltage-sensing Read and Write Verification for reliable multi-bit RRAM operation

被引：15
|
作者：
Yoon, Jong-Hyeok [1 ,2 ]
Chang, Muya [1 ]
Khwa, Win-San [3 ]
Chih, Yu-Der [4 ]
Chang, Meng-Fan [3 ]
Raychowdhury, Arijit [1 ]
机构：
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
[2] DGIST, Daegu, South Korea
[3] TSMC Corp Res, Hsinchu, Taiwan
[4] TSMC Design Technol, Hsinchu, Taiwan
来源：
2021 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2021年
关键词：
D O I：
10.1109/CICC51472.2021.9431412
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
相关论文
共 3 条
  • [1] A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding
    Yoon, Jong-Hyeok
    Chang, Muya
    Khwa, Win-San
    Chih, Yu-Der
    Chang, Meng-Fan
    Raychowdhury, Arijit
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2022, 57 (03) : 845 - 857
  • [2] A 40nm 64Kb 56.67TOPS/W Read-Disturb-Tolerant Compute-in-Memory/Digital RRAM Macro with Active-Feedback-Based Read and In-Situ Write Verification
    Yoon, Jong-Hyeok
    Chang, Muya
    Khwa, Win-San
    Chih, Yu-Der
    Chang, Meng-Fan
    Raychowdhury, Arijit
    2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2021, 64 : 404 - +
  • [3] A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection
    Yoon, Jong-Hyeok
    Chang, Muya
    Khwa, Win-San
    Chih, Yu-Der
    Chang, Meng-Fan
    Raychowdhury, Arijit
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2022, 57 (01) : 68 - 79
1