Full-bit functional, high-density 8 Mbit one transistor-one capacitor ferroelectric random access memory embedded within a low-power 130 nm logic process

We report the electrical properties of a full-bit functional 8 Mbit one transitor-one capacitor (IT-1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leakage 130 nm 51, in Cu interconnect complementary metal oxide semiconductor (CMOS) logic process. To increase manufacturability and reliability margins, we have introduced a single-bit substitution methodology that replaces bits at the low-end of the original distribution with redundant elements leading to an increased signal margin. Further, we have fabricated a digital signal processor (DSP) using the eFRAM process flow and have shown that the operating frequency is nearly the same relative to the CMOS baseline. With the development of logic-compatible eFRAM, we have created a technology platform that enables ultra-low-power devices.