Deep etched DBR gratings in InP for photonic integrated circuits

被引：9
|
作者：
Docter, B. [1 ]
Geluk, E. J. [1 ]
Sander-Jochem, M. J. H. [1 ]
Karouta, F. [1 ]
Smit, M. K. [1 ]
机构：
[1] Eindhoven Univ Technol, COBRA Interuniv Res Inst Commun Technol, Fac Elect Engn, Optoelect Devices Grp, POB 513, NL-5600 MB Eindhoven, Netherlands
来源：
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/ICIPRM.2007.381164
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel fabrication process was developed to realize high quality SiOx masks for Cl-2 based ICP etching of InP. First order DBR mirrors, 3 mu m deep, were realized that can be used in photonic circuits. The process can be used in combination with conventional optical lithography, reducing production cost.
引用
收藏
页码：226 / 228
页数：3
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