Exchange interaction of 3d transition metal impurity with band electrons in diluted magnetic semiconductors

被引：0
|
作者：
Yang, TR [1 ]
Kim, MR [1 ]
机构：
[1] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan
来源：
OPTOELECTRONIC MATERIALS AND DEVICES II | 2000年 / 4078卷
关键词：
exchange interaction; diluted magnetic semiconductors;
D O I：
10.1117/12.392110
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of the exchange interaction between the localized d electrons of manganese ion and the delocalized host band electrons in II1-xMnxVI semiconductors are discussed based on the perturbation scheme and the kp theory as a function of the manganese composition. We observe that the exchange interaction lead to the red shift of the energy gap and it is shown that the many-body interaction due to exchange play an important role in accurate depiction of the energy gap with variation of the manganese amounts in diluted magnetic semiconductors. In addition, we have compared the results with experimental data of IR spectroscopy.
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页码：704 / 711
页数：8
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