Investigation of structural-phase transitions dynamics on the surface of implanted silicon at rapid thermal processing

被引：1

作者：

Fattakhov, Ya. V. ^{[1
]}

Galyautdinov, M. F. ^{[1
]}

L'vova, T. N. ^{[1
]}

Zakharov, M. V. ^{[1
]}

Khaibullin, I. B. ^{[1
]}

机构：

[1] Russian Acad Sci, Kazan Phys Tech Inst, Kazan 420029, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷

基金：

俄罗斯基础研究基金会;

关键词：

ion implantation; surface; semiconductors; defects; rapid thermal annealing; lasers; local melting; recrystallization;

D O I：

10.1016/j.nimb.2007.01.270

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Dynamics of recrystallization of implanted silicon surface has been investigated using an in situ diffraction method. The method is based on registering the diffraction signal from a special periodic structure formed by ion implantation. The change of the intensity of the diffraction maximum may enable one to define the moment when recrystallization of the amorphous layer ends, the moment when the local melting of the surface starts and the duration of the stage when the liquid phase exists. Investigation of the dynamics of recrystallization and anisotropic local melting of implanted silicon under irradiation by pulses of incoherent light with different duration and power densities has been carried out. Our method enables one to carry out rapid thermal annealing with a feedback on the ending of recrystallization. This provides a better control on the formation of shallow p-n junctions. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：222 / 226

页数：5

共 50 条

[1] Investigation of the dynamics of recrystallization and melting of the surface of implanted silicon at rapid thermal processing
Fattakhov, YV
Galyautdinov, MF
L'vova, TN
Zakharov, MV
Khaibullin, IB
MICRO- AND NANOELECTRONICS 2003, 2004, 5401 : 104 - 109
[2] FORMATION OF PLATINUM SILICIDE LAYERS DURING THE RAPID THERMAL PROCESSING OF THE PLATINUM-SILICON SYSTEM: STRUCTURAL-PHASE CHANGES
Solodukha, V. A.
Pilipenko, V. A.
Gorushko, V. A.
Komarov, F. F.
Milchanin, O. V.
HIGH TEMPERATURE MATERIAL PROCESSES, 2019, 23 (03): : 195 - 208
[3] Investigation of dynamics of phase transitions on silicon surface at light pulse heating
Fattakhov, YV
Galyautdinov, MF
L'vova, TN
Zakharov, MV
Khaibullin, IB
PECS 2001: PHOTON ECHO AND COHERENT SPECTROSCOPY, 2001, 4605 : 399 - 408
[4] Structural-phase transitions in solid nitrous oxide
Drobyshev, A.
Aldiyarov, A.
Korshikov, E.
Sokolov, D.
Kurnosov, V.
LOW TEMPERATURE PHYSICS, 2012, 38 (11) : 1058 - 1062
[5] In situ investigation of phase transitions of implanted silicon at powerful light irradiation
Fattakhov, YV
Galyautdinov, MF
L'vova, TN
Khaibullin, IB
VACUUM, 2001, 63 (04) : 649 - 655
[6] The Effect of Thermal Annealing on Structural-phase Changes in the Ni–Ti Alloy Implanted with Krypton Ions
V. P. Poltavtseva
S. B. Kislitsin
S. A. Ghyngazov
Russian Physics Journal, 2016, 59 : 159 - 165
[7] EXACTLY SOLUBLE MODELS FOR DISTORTIVE STRUCTURAL-PHASE TRANSITIONS
SCHNEIDER, T
STOLL, E
BECK, H
HELVETICA PHYSICA ACTA, 1975, 48 (01): : 38 - 38
[8] Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-Implanted Surface Passivated High-Resistivity Silicon
Liu, Chih-Yi
Weng, Min-Hang
Lin, Jyun-Min
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2011, 21 (07) : 365 - 367
[9] STRUCTURAL-PHASE JUNCTIONS IN THE SYSTEM OF Pt-Si DURING RAPID THERMAL TREATMENT
Pilipenka, Uladzimir A.
Komarov, Fadey F.
Saladukha, Vitali A.
Harushka, Valiantsina A.
DOKLADY NATSIONALNOI AKADEMII NAUK BELARUSI, 2020, 64 (02): : 238 - 244
[10] The Effect of Thermal Annealing on Structural-phase Changes in the Ni-Ti Alloy Implanted with Krypton Ions
Poltavtseva, V. P.
Kislitsin, S. B.
Ghyngazov, S. A.
RUSSIAN PHYSICS JOURNAL, 2016, 59 (02) : 159 - 165

← 1 2 3 4 5 →