The design of EUVL camera with large numerical aperture

被引：1

作者：

Li, YQ ^{[1
]}

Watanabe, T ^{[1
]}

Kinoshita, H ^{[1
]}

机构：

[1] Himeji Inst Technol, Lab Adv Sci & Technol Ind, Kouto, Hyogo 6781205, Japan

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES IV | 2000年 / 3997卷

关键词：

optical design; extreme ultraviolet lithography (EUVL); four-mirror imaging optics;

D O I：

10.1117/12.390115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A design of four-mirror imaging optics is presented for the wavelength of 13.5 nm. The numerical aperture (NA) is 0.15. The reduction ratio is 5:1, The exposure area on wafer is 0.5mm(width) x 25mm(chord length). The designed resolution is 50 nm with MTF approximate to 60%. The distortion is less than 0.01% and the astigmatism is near zero at the designed ring field.

引用

页码：759 / 764

页数：6

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