Improving the endurance characteristics through boron implant at active edge in 1 G NAND flash

被引：3

作者：

Kang, Daewoong ^{[1
,2
]}

Chang, Sungnam ^{[1
,2
]}

Seo, Seunggun ^{[1
,2
]}

Song, Yongwook ^{[1
,2
]}

Yoon, Hojin ^{[1
,2
]}

Lee, Eunjung ^{[1
,2
]}

Chang, Dongwon ^{[1
,2
]}

Ue, Wonseong ^{[1
,2
]}

Park, Byung-Gook ^{[1
,2
]}

Lee, Jong Duk ^{[1
,2
]}

Park, Il Han ^{[1
,2
]}

Kang, Sangwoo ^{[1
,2
]}

Shin, Hyungcheol ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, San 56-1, Seoul 151742, South Korea

[2] Samsung Elect Co Ltd, SRAM FLASH PA Team Memory Business, Yongam 449711, South Korea

来源：

2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL | 2007年

关键词：

boron; trap; electric field; endurance; bake retentioin;

D O I：

10.1109/RELPHY.2007.369996

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

One of the most important issues of NAND flash memory is reliability problems caused by oxide and interface traps. But it has been revealed that their generation rate increases by Folwer-Nordheim current stressing on the tunnel oxide as the channel width of shallow trench isolation (STI) isolated NAND flash cells shrinks and electric field is increased at active edge of STI profile. By adjusting the boron doping of active edge, we decrease not only the electric field but also the trap generation. Also we confirmed the improvement of endurance and bake retention characteristics.

引用

页码：652 / +

页数：2

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