Study on high-temperature performances of 1.3-μm InGaAsP-InP strained multiquantum-well buried-heterostructure lasers

Stripe-width and cavity length dependencies of high-temperature performances of 1.3-mum InGaAsP-InP well-designed buried-hetrostructure strained multiquantum-well (MQW) lasers were investigated. The threshold currents, as low as 4.5110.5 mA and slope efficiencies as high as 0.48/0.42 mW/mA at 25 degreesC/85 degreesC were obtained in the MQW lasers with 1.5-mum width, 250-mum length, and 0.3/0.85 facet reflectivity. With temperature increasing from 25 degreesC to 85 degreesC, the MQW lasers exhibited lower output power degradation, the minimum value was 1.78 dB at an operation current of 45 mA. The MQW lasers were suitable for application in optical access networks.