Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy

被引:19
|
作者
Pickrell, G. W. [1 ]
Armstrong, A. M. [1 ]
Allerman, A. A. [1 ]
Crawford, M. H. [1 ]
Glaser, C. E. [1 ]
Kempisty, J. [1 ]
Abate, V. M. [1 ]
机构
[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
关键词
20;
D O I
10.1063/1.5110521
中图分类号
O59 [应用物理学];
学科分类号
摘要
The impact of dry-etch-induced defects on the electrical performance of regrown, c-plane, GaN p-n diodes where the p-GaN layer is formed by epitaxial regrowth using metal-organic, chemical-vapor deposition was investigated. Diode leakage increased significantly for etched-and-regrown diodes compared to continuously grown diodes, suggesting a defect-mediated leakage mechanism. Deep level optical spectroscopy (DLOS) techniques were used to identify energy levels and densities of defect states to understand etch-induced damage in regrown devices. DLOS results showed the creation of an emergent, mid-gap defect state at 1.90 eV below the conduction band edge for etched-and-regrown diodes. Reduction in both the reverse leakage and the concentration of the 1.90 eV mid-gap state was achieved using a wet chemical treatment on the etched surface before regrowth, suggesting that the 1.90 eV deep level contributes to increased leakage and premature breakdown but can be mitigated with proper post-etch treatments to achieve >600 V reverse breakdown operation.
引用
收藏
页数:7
相关论文
共 15 条
  • [1] Characterization of GaN p-n diodes using deep level transient Fourier spectroscopy
    Asghar, M
    Muret, P
    Beaumont, B
    Gibart, P
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180): : 345 - 349
  • [2] Deep Levels in GaN p-n Junctions Studied by Deep Level Transient Spectroscopy and Laplace Transform Deep-Level Spectroscopy
    Dyba, P.
    Placzek-Popko, E.
    Zielony, E.
    Gumienny, Z.
    Grzanka, S.
    Czernecki, R.
    Suski, T.
    ACTA PHYSICA POLONICA A, 2011, 119 (05) : 669 - 671
  • [3] Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis
    Aragon, Andrew
    Monavarian, Morteza
    Pickrell, Greg
    Crawford, Mary
    Allerman, Andrew
    Feezell, Daniel
    Armstrong, Andrew M.
    JOURNAL OF APPLIED PHYSICS, 2020, 128 (18)
  • [4] 1.2 kV regrown GaN vertical p-n power diodes with ultra low leakage using advanced materials engineering
    Fu, Kai
    Fu, Houqiang
    Liu, Hanxiao
    Alugubelli, Shanthan Reddy
    Huang, Xuanqi
    Chen, Hong
    Yang, Tsung-Han
    Montes, Jossue
    Yang, Chen
    Zhaou, Jingan
    Ponce, Fernando A.
    Zhao, Yuji
    2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [5] Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy
    Lechaux, Y.
    Minj, A.
    Mechin, L.
    Liang, H.
    Geens, K.
    Zhao, M.
    Simoen, E.
    Guillet, B.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 36 (02)
  • [6] The study of low temperature irradiation induced defects in p-Si using deep-level transient spectroscopy
    Danga, H. T.
    Tunhuma, S. M.
    Auret, F. D.
    Igumbor, E.
    Omotoso, E.
    Meyer, W. E.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 442 : 28 - 30
  • [7] Electron Traps at Sidewalls of Vertical n+-GaAs/n--InGaP/p+-GaAs Diodes Detected with Deep-Level Transient Spectroscopy
    Yu, Hao
    Hsu, Po-Chun
    Vais, Abhitosh
    Simoen, Eddy
    Waldron, Niamh
    Collaert, Nadine
    2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2019,
  • [8] Photocapacitance spectroscopy study of deep-level defects in freestanding n-GaN substrates using transparent conductive polymer Schottky contacts
    Nakano, Yoshitaka
    Lozac'h, Mickael
    Matsuki, Nobuyuki
    Sakoda, Kazuaki
    Sumiya, Masatomo
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (02):
  • [9] Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy
    Choi, KJ
    Jang, HW
    Lee, JL
    APPLIED PHYSICS LETTERS, 2003, 82 (08) : 1233 - 1235
  • [10] Investigation of a minority carrier trap in a NiO/β-Ga2O3 p-n heterojunction via deep-level transient spectroscopy
    Qu, Haolan
    Chen, Jiaxiang
    Zhang, Yu
    Sui, Jin
    Zhang, Ruohan
    Zhou, Junmin
    Lu, Xing
    Zou, Xinbo
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (10)