Stability of the interface between indium-tin-oxide and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) in polymer light-emitting diodes

被引:1064
|
作者
de Jong, MP [1 ]
van IJzendoorn, LJ [1 ]
de Voigt, MJA [1 ]
机构
[1] Eindhoven Univ Technol, Dept Appl Phys, Ctr Plasmaphys & Radiat Technol, NL-5600 MB Eindhoven, Netherlands
关键词
D O I
10.1063/1.1315344
中图分类号
O59 [应用物理学];
学科分类号
摘要
A cause for degradation of polymer light-emitting diodes is the oxidation of the polymer by oxygen diffusing out of the indium-tin-oxide (ITO) anode. This problem can be solved by the introduction of an organic hole-injecting film, poly-(3,4-ethylenedioxythiophene) (PEDOT) doped with poly(styrenesulfonate) (PSS), between the ITO and the emissive polymer. Indeed, a dramatic improvement of the lifetime and also the luminous efficiency has been observed. However, our Rutherford backscattering (RBS) studies show that the ITO/PEDOT:PSS interface is not stable. In as prepared glass/ITO/PEDOT:PSS samples 0.02 at. % indium was found in the PEDOT:PSS film. Annealing in a nitrogen atmosphere at 100 degrees C during 2500 h increased the indium concentration to 0.2 at. %. Upon exposure to air much faster degradation of the ITO/PEDOT:PSS interface was observed; after several days in air the amount of indium reached a saturation concentration of 1.2 at. %. The degradation of the interface can be explained by etching of the ITO due to the strong acidic nature of PEDOT:PSS. (C) 2000 American Institute of Physics. [S0003-6951(00)05040-3].
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页码:2255 / 2257
页数:3
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