ATOMOS: An ATOmistic MOdelling Solver for dissipative DFT transport in ultra-scaled HfS2 and Black phosphorus MOSFETs

被引：0

作者：

Afzalian, Aryan ^{[1
]}

Pourtois, Geoffrey ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

2019 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2019) | 2019年

关键词：

Semiconductor Physics; 2D-material; Quantum transport; DFT NEGF; CMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A state-of-the-art DFT-NEGF based ATOmistic - MOdelling Solver (ATOMOS) was developed and used to assess the physics and fundamental-performance potential of various scaled mono-layer transition-metal-dichalcogenides and black-phosphorus (BP) MOSFETs down to a gate length of 5 nm, including the effect of electron-phonon scattering. Our study highlights the good scalability and drive-current potential of HfS2 and the impact of optical-phonon scattering for BP.

引用

页码：199 / 202

页数：4