Enhanced electron-hole interaction and optical absorption in a silicon nanowire

被引：61
|
作者：
Yang, Li [1 ]
Spataru, Catalin D.
Louie, Steven G.
Chou, M. Y.
机构：
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA
来源：
PHYSICAL REVIEW B | 2007年 / 75卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.75.201304
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a first-principles study of the correlated electron-hole states in a silicon nanowire of a diameter of 1.2 nm and their influence on the optical absorption spectrum. The quasiparticle states are calculated employing a many-body Green's function approach within the GW approximation to the electron self-energy, and the effects of the electron-hole interaction to optical excitations are evaluated by solving the Bethe-Salpeter equation. The enhanced Coulomb interaction in this confined geometry results in an unusually large binding energy (1-1.5 eV) for the excitons, which dominate the optical absorption spectrum.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] ELECTRON-HOLE INTERACTION AND OPTICAL-SPECTRA OF SILICON
    PANCHENKO, OF
    RAZARENOVA, LK
    SHATALOV, VM
    OPTIKA I SPEKTROSKOPIYA, 1990, 68 (04): : 950 - 953
  • [2] OPTICAL FREE-CARRIER ABSORPTION OF AN ELECTRON-HOLE PLASMA IN SILICON
    SERNELIUS, BE
    PHYSICAL REVIEW B, 1989, 39 (15): : 10825 - 10830
  • [3] Optical absorption of insulators and the electron-hole interaction: An ab initio calculation
    Benedict, LX
    Shirley, EL
    Bohn, RB
    PHYSICAL REVIEW LETTERS, 1998, 80 (20) : 4514 - 4517
  • [4] Enhanced Optical Absorption in Silicon Nanowire
    Hasan, Mehedhi
    Huq, Md. Fazlul
    Mahmood, Zahid Hasan
    Hussain, Sabina
    16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES, 2012, 8549
  • [5] Theory of optical absorption with electron-hole attraction
    Shirley, EL
    Benedict, LX
    Bohn, RB
    PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON PHYSICS AND CHEMISTRY OF LUMINESCENT MATERIALS, 1999, 98 (24): : 36 - 48
  • [6] The electron-hole interaction and linear optical constants
    Benedict, LX
    OPTICAL PROPERTIES OF MATERIALS, 2000, 579 : 21 - 31
  • [7] INTERACTION OF AN ELECTRON-HOLE PLASMA WITH OPTICAL PHONONS IN GAP
    SMITH, GO
    JUHASZ, T
    BRON, WE
    LEVINSON, YB
    PHYSICAL REVIEW LETTERS, 1992, 68 (15) : 2366 - 2369
  • [8] Enhanced luminescence from electron-hole droplets in silicon nanolayers
    Nihonyanagi, S
    Kanemitsu, Y
    APPLIED PHYSICS LETTERS, 2004, 85 (23) : 5721 - 5723
  • [9] ELECTRON-HOLE DROPS IN SILICON
    CAPIZZI, M
    VOOS, M
    BENOITALAGUILLAUME, C
    MCGRODDY, JC
    SOLID STATE COMMUNICATIONS, 1975, 16 (06) : 709 - 712
  • [10] OPTICAL HEATING OF ELECTRON-HOLE PLASMA IN SILICON BY PICOSECOND PULSES
    LOMPRE, LA
    LIU, JM
    KURZ, H
    BLOEMBERGEN, N
    APPLIED PHYSICS LETTERS, 1984, 44 (01) : 3 - 5
12345