Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor

被引:0
|
作者
Bai Yu-Rong [1 ]
Xu Jing-Ping [1 ]
Liu Lu [1 ]
Fan Min-Min [1 ]
Huang Yong [1 ]
Cheng Zhi-Xiang [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
基金
中国国家自然科学基金;
关键词
germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor; drain current model; transconductance; cut-off frequency; MOSFETS;
D O I
10.7498/aps.63.237304
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
An analytical model for drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator (GeOI) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is established by solving two-dimensional Poisson's equation to derive the surface potential and inversion charge in the channel region. This drain current model includes velocity-saturation, channel-length modulation and mobility-modulation effects; and it simultaneously considers the impacts of the interface-trapped charges at both gate oxide/channel and buried oxide/channel interfaces and the fixed oxide charges on the drain current. A good agreement between the simulated drain current and experimental data is achieved in both the saturation and non-saturation regions, confirming the validity of the model. Using the model, the influences of the main structural and physical parameters on transconductance, output conductance, cut-off frequency, and voltage gain of the device are investigated. These can be served as a guide for the design of the GeOI PMOSFET.
引用
收藏
页数:9
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