Electromagnetic metamaterial-inspired band gap and perfect transmission in semiconductor and graphene-based electronic and photonic structures

被引:6
|
作者
Mahdy, M. R. C. [1 ]
Al Sayem, Ayed [2 ]
Shahriar, Arif [2 ,3 ]
Shawon, Jubayer [4 ]
Al-Quaderi, Golam Dastegir [5 ]
Jahangir, Ifat [6 ]
Matin, M. A. [2 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117548, Singapore
[2] Bangladesh Univ Engn & Technol, Dept EEE, Dhaka, Bangladesh
[3] Monash Univ, Dept Elect & Comp Syst Engn, Monash, Vic, Australia
[4] Univ Malaya, Dept Elect & Comp Engn, Kuala Lumpur, Malaysia
[5] Univ Dhaka, Dept Phys, Dhaka 1000, Bangladesh
[6] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
来源
EUROPEAN PHYSICAL JOURNAL PLUS | 2016年 / 131卷 / 04期
关键词
Gate Voltage; Matter Wave; Dielectric Thickness; Quantum Capacitance; Metamaterial Structure;
D O I
10.1140/epjp/i2016-16092-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this article, at first we propose a unified and compact classification of single negative electromagnetic metamaterial-based perfect transmission unit cells. The classes are named as: type-A, -B and -C unit cells. Then based on the classification, we have extended these ideas in semiconductor and graphene regimes. For type-A: Based on the idea of electromagnetic Spatial Average Single Negative bandgap, novel bandgap structures have been proposed for electron transmission in semiconductor heterostructures. For type-B: with dielectric-graphene-dielectric structure, almost all angle transparency is achieved for both polarizations of electromagnetic wave in the terahertz frequency range instead of the conventional transparency in the microwave frequency range. Finally the application of the gated dielectric-graphene-dielectric has been demonstrated for the modulation and switching purpose.
引用
收藏
页数:9
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