Specimen preparation methods for elemental characterisation of grain boundaries and isolated dislocations in multicrystalline silicon using atom probe tomography

Multicrystalline silicon (mc-Si) is a cost effective feedstock for solar photovoltaic devices but is limited by the presence of defects and impurities. Imaging impurities segregated to nanometre-scale dislocations and grain boundaries is a challenge that few materials characterisation techniques can achieve. Atom Probe Tomography (APT) is a 3-dimensional time-of-flight microscopy technique that can image the distribution of elements at the atomic scale, however one of the most challenging factors when using APT is the complexity of specimen preparation for specific regions of interest. Atom probe specimen preparation methods have been developed in a dual FIB/SEM system that enable a specific extended defect such as an isolated dislocation or a section of a grain boundary to be selected for APT analysis. The methods were used to fabricate APT specimens from an isolated dislocation and a grain boundary in me-Si samples. Complementary TEM images confirm the presence of the defects in both specimens, whilst APT analyses also reveal segregation of impurities to the defects.