Epitaxial NiMnSb films on GaAs(001)

被引：83
|
作者：
Van Roy, W [1 ]
De Boeck, J [1 ]
Brijs, B [1 ]
Borghs, G [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 25期
关键词：
D O I：
10.1063/1.1334356
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We show the growth of epitaxial NiMnSb(001) thin films, a half-metallic ferromagnet, on GaAs(001) by molecular-beam epitaxy. The Sb content of the films strongly depends on the Sb flux. Sb-deficient films show a reduced magnetization and the formation of a Mn2As interface layer. Stoichiometric films exhibit the bulk lattice constant, have a saturation magnetization close to the bulk value, and do not suffer from Mn2As formation at the interface. They show in-plane uniaxial anisotropy with nearly square hysteresis loops along the easy axis, which points either along [110] or [1 (1) over bar0] depending on the growth conditions. (C) 2000 American Institute of Physics. [S0003-6951(00)01652-1].
引用
收藏
页码：4190 / 4192
页数：3
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